Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and Modeling

• Main Authors: Ang, D.S., Lun, Z., Ling, C.H.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Generation-recombination (G-R) noise; Lorentzian; Low-frequency noise; Shot-noise; Silicon-on-insulator (SOI); SIMOX
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82406
• Institution: National University of Singapore

10.1109/TED.2003.819371