Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides

Journal of Applied Physics

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Bibliographic Details
Main Authors:	Chim, W.K., Lim, P.S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56214
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Institution:	National University of Singapore

Description
Summary:	Journal of Applied Physics

Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (&lt;5nm) nitrided oxides