Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides

Journal of Applied Physics

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Main Authors: Chim, W.K., Lim, P.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56214
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-562142023-08-29T09:22:38Z Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides Chim, W.K. Lim, P.S. ELECTRICAL & COMPUTER ENGINEERING Journal of Applied Physics 91 3 1304-1313 JAPIA 2014-06-17T02:52:02Z 2014-06-17T02:52:02Z 2002-02-01 Article Chim, W.K., Lim, P.S. (2002-02-01). Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides. Journal of Applied Physics 91 (3) : 1304-1313. ScholarBank@NUS Repository. 00218979 http://scholarbank.nus.edu.sg/handle/10635/56214 000173418500062 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description Journal of Applied Physics
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Chim, W.K.
Lim, P.S.
format Article
author Chim, W.K.
Lim, P.S.
spellingShingle Chim, W.K.
Lim, P.S.
Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides
author_sort Chim, W.K.
title Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides
title_short Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides
title_full Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides
title_fullStr Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides
title_full_unstemmed Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides
title_sort hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/56214
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