Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides
Journal of Applied Physics
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sg-nus-scholar.10635-562142023-08-29T09:22:38Z Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides Chim, W.K. Lim, P.S. ELECTRICAL & COMPUTER ENGINEERING Journal of Applied Physics 91 3 1304-1313 JAPIA 2014-06-17T02:52:02Z 2014-06-17T02:52:02Z 2002-02-01 Article Chim, W.K., Lim, P.S. (2002-02-01). Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides. Journal of Applied Physics 91 (3) : 1304-1313. ScholarBank@NUS Repository. 00218979 http://scholarbank.nus.edu.sg/handle/10635/56214 000173418500062 Scopus |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Chim, W.K. Lim, P.S. |
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Chim, W.K. Lim, P.S. |
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Chim, W.K. Lim, P.S. Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides |
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Chim, W.K. |
title |
Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides |
title_short |
Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides |
title_full |
Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides |
title_fullStr |
Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides |
title_full_unstemmed |
Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides |
title_sort |
hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides |
publishDate |
2014 |
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http://scholarbank.nus.edu.sg/handle/10635/56214 |
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1775627195159412736 |