Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides
Journal of Applied Physics
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/56214 |
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| Institution: | National University of Singapore |