Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistors

Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistors

10.1149/1.1488918

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Bibliographic Details
Main Authors: Ong, S.Y., Chor, E.F., Lee, J., See, A., Chan, L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56263
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Institution: National University of Singapore
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Summary:10.1149/1.1488918

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