Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistors

Impact of indium and boron interaction on device performance for short and narrow channel n-metal oxide semiconductor field effect transistors

10.1149/1.1488918

Saved in:
Bibliographic Details
Main Authors: Ong, S.Y., Chor, E.F., Lee, J., See, A., Chan, L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56263
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Be the first to leave a comment!
You must be logged in first

Similar Items