In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applications
10.1149/1.2768288
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sg-nus-scholar.10635-563002024-11-11T18:19:36Z In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applications Zhu, M. Chin, H.-C. Tung, C.-H. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING NUS NANOSCIENCE & NANOTECH INITIATIVE 10.1149/1.2768288 Journal of the Electrochemical Society 154 10 H879-H882 JESOA 2014-06-17T02:53:01Z 2014-06-17T02:53:01Z 2007 Article Zhu, M., Chin, H.-C., Tung, C.-H., Yeo, Y.-C. (2007). In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applications. Journal of the Electrochemical Society 154 (10) : H879-H882. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2768288 00134651 http://scholarbank.nus.edu.sg/handle/10635/56300 000248984700068 Scopus |
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National University of Singapore |
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Asia |
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Singapore Singapore |
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| description |
10.1149/1.2768288 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Zhu, M. Chin, H.-C. Tung, C.-H. Yeo, Y.-C. |
| format |
Article |
| author |
Zhu, M. Chin, H.-C. Tung, C.-H. Yeo, Y.-C. |
| spellingShingle |
Zhu, M. Chin, H.-C. Tung, C.-H. Yeo, Y.-C. In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applications |
| author_sort |
Zhu, M. |
| title |
In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applications |
| title_short |
In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applications |
| title_full |
In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applications |
| title_fullStr |
In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applications |
| title_full_unstemmed |
In situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for MOS applications |
| title_sort |
in situ silane passivation of gallium arsenide and deposition of high-permittivity gate dielectric for mos applications |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/56300 |
| _version_ |
1821193274810957824 |