Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

10.1063/1.2777401

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Bibliographic Details
Main Authors: Oh, H.J., Choi, K.J., Loh, W.Y., Htoo, T., Chua, S.J., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56353
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Institution: National University of Singapore
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Summary:10.1063/1.2777401

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