Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

• Main Authors: Oh, H.J., Choi, K.J., Loh, W.Y., Htoo, T., Chua, S.J., Cho, B.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/56353
• Institution: National University of Singapore

10.1063/1.2777401