Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

10.1063/1.2777401

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Bibliographic Details
Main Authors:	Oh, H.J., Choi, K.J., Loh, W.Y., Htoo, T., Chua, S.J., Cho, B.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56353
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-563532023-10-25T23:29:23Z Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques Oh, H.J. Choi, K.J. Loh, W.Y. Htoo, T. Chua, S.J. Cho, B.J. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2777401 Journal of Applied Physics 102 5 - JAPIA 2014-06-17T02:53:38Z 2014-06-17T02:53:38Z 2007 Article Oh, H.J., Choi, K.J., Loh, W.Y., Htoo, T., Chua, S.J., Cho, B.J. (2007). Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques. Journal of Applied Physics 102 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2777401 00218979 http://scholarbank.nus.edu.sg/handle/10635/56353 000249474100074 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2777401
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Oh, H.J. Choi, K.J. Loh, W.Y. Htoo, T. Chua, S.J. Cho, B.J.
format	Article
author	Oh, H.J. Choi, K.J. Loh, W.Y. Htoo, T. Chua, S.J. Cho, B.J.
spellingShingle	Oh, H.J. Choi, K.J. Loh, W.Y. Htoo, T. Chua, S.J. Cho, B.J. Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques
author_sort	Oh, H.J.
title	Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques
title_short	Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques
title_full	Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques
title_fullStr	Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques
title_full_unstemmed	Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques
title_sort	integration of gaas epitaxial layer to si-based substrate using ge condensation and low-temperature migration enhanced epitaxy techniques
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56353
_version_	1781781159174209536

Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

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