Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrate

Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrate

10.1063/1.2822422

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Bibliographic Details
Main Authors: Dalapati, G.K., Sridhara, A., Wong, A.S.W., Chia, C.K., Lee, S.J., Chi, D.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56370
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56370

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