Metal carbides for band-edge work function metal gate CMOS devices

10.1109/TED.2008.927946

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Bibliographic Details
Main Authors:	Hwang, W.S., Chan, D.S.H., Cho, B.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	CMOS devices Equivalent oxide thickness (EOT) Flatband voltage HfC high-κ dielectric Metal carbide Metal gate MOS capacitor TaC Work function (WF)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56606
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-56606
record_format	dspace
spelling	sg-nus-scholar.10635-566062023-08-24T07:02:42Z Metal carbides for band-edge work function metal gate CMOS devices Hwang, W.S. Chan, D.S.H. Cho, B.J. ELECTRICAL & COMPUTER ENGINEERING CMOS devices Equivalent oxide thickness (EOT) Flatband voltage HfC high-κ dielectric Metal carbide Metal gate MOS capacitor TaC Work function (WF) 10.1109/TED.2008.927946 IEEE Transactions on Electron Devices 55 9 2469-2474 IETDA 2014-06-17T02:56:30Z 2014-06-17T02:56:30Z 2008 Article Hwang, W.S., Chan, D.S.H., Cho, B.J. (2008). Metal carbides for band-edge work function metal gate CMOS devices. IEEE Transactions on Electron Devices 55 (9) : 2469-2474. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.927946 00189383 http://scholarbank.nus.edu.sg/handle/10635/56606 000258914000024 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	CMOS devices Equivalent oxide thickness (EOT) Flatband voltage HfC high-κ dielectric Metal carbide Metal gate MOS capacitor TaC Work function (WF)
spellingShingle	CMOS devices Equivalent oxide thickness (EOT) Flatband voltage HfC high-κ dielectric Metal carbide Metal gate MOS capacitor TaC Work function (WF) Hwang, W.S. Chan, D.S.H. Cho, B.J. Metal carbides for band-edge work function metal gate CMOS devices
description	10.1109/TED.2008.927946
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Hwang, W.S. Chan, D.S.H. Cho, B.J.
format	Article
author	Hwang, W.S. Chan, D.S.H. Cho, B.J.
author_sort	Hwang, W.S.
title	Metal carbides for band-edge work function metal gate CMOS devices
title_short	Metal carbides for band-edge work function metal gate CMOS devices
title_full	Metal carbides for band-edge work function metal gate CMOS devices
title_fullStr	Metal carbides for band-edge work function metal gate CMOS devices
title_full_unstemmed	Metal carbides for band-edge work function metal gate CMOS devices
title_sort	metal carbides for band-edge work function metal gate cmos devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56606
_version_	1775627258431537152

Metal carbides for band-edge work function metal gate CMOS devices

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