Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates

Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates

10.1088/0953-8984/20/9/095210

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Bibliographic Details
Main Authors: Soh, C.B., Chow, S.Y., Tripathy, S., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57229
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Institution: National University of Singapore
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Summary:10.1088/0953-8984/20/9/095210

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