Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates

Reduction of V-pit and threading dislocation density in InGaN/GaN heterostructures grown on cracked AlGaN templates

10.1088/0953-8984/20/9/095210

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Bibliographic Details
Main Authors:	Soh, C.B., Chow, S.Y., Tripathy, S., Chua, S.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57229
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

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