Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories

Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories

10.1063/1.1868077

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Bibliographic Details
Main Authors: Chen, J.H., Yoo, W.J., Chan, D.S.H., Tang, L.-J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57360
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/57360

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