Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories

10.1063/1.1868077

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Main Authors: Chen, J.H., Yoo, W.J., Chan, D.S.H., Tang, L.-J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57360
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-573602023-10-30T21:13:59Z Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories Chen, J.H. Yoo, W.J. Chan, D.S.H. Tang, L.-J. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1868077 Applied Physics Letters 86 7 1-3 APPLA 2014-06-17T03:05:17Z 2014-06-17T03:05:17Z 2005-02-14 Article Chen, J.H., Yoo, W.J., Chan, D.S.H., Tang, L.-J. (2005-02-14). Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories. Applied Physics Letters 86 (7) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1868077 00036951 http://scholarbank.nus.edu.sg/handle/10635/57360 000227439400088 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.1868077
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Chen, J.H.
Yoo, W.J.
Chan, D.S.H.
Tang, L.-J.
format Article
author Chen, J.H.
Yoo, W.J.
Chan, D.S.H.
Tang, L.-J.
spellingShingle Chen, J.H.
Yoo, W.J.
Chan, D.S.H.
Tang, L.-J.
Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories
author_sort Chen, J.H.
title Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories
title_short Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories
title_full Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories
title_fullStr Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories
title_full_unstemmed Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories
title_sort self-assembly of al2o3 nanodots on sio2 using two-step controlled annealing technique for long retention nonvolatile memories
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/57360
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