Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors

10.1109/LED.2007.905406

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Bibliographic Details
Main Authors:	Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Extended-II FinFET Multiple gate SiGe Source/drain stressors Strain Stress
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57525
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57525
record_format	dspace
spelling	sg-nus-scholar.10635-575252024-11-11T07:46:32Z Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Extended-II FinFET Multiple gate SiGe Source/drain stressors Strain Stress 10.1109/LED.2007.905406 IEEE Electron Device Letters 28 10 905-908 EDLED 2014-06-17T03:07:10Z 2014-06-17T03:07:10Z 2007-10 Article Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-10). Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors. IEEE Electron Device Letters 28 (10) : 905-908. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.905406 07413106 http://scholarbank.nus.edu.sg/handle/10635/57525 000249942100019 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Extended-II FinFET Multiple gate SiGe Source/drain stressors Strain Stress
spellingShingle	Extended-II FinFET Multiple gate SiGe Source/drain stressors Strain Stress Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
description	10.1109/LED.2007.905406
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
author_sort	Tan, K.-M.
title	Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
title_short	Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
title_full	Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
title_fullStr	Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
title_full_unstemmed	Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
title_sort	strained p-channel finfets with extended π-shaped silicon-germanium source and drain stressors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57525
_version_	1821197801685516288

Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors

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