Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors

10.1109/LED.2007.905406

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
مؤلفون آخرون: ELECTRICAL & COMPUTER ENGINEERING
التنسيق: مقال
منشور في: 2014
الموضوعات:
الوصول للمادة أونلاين:http://scholarbank.nus.edu.sg/handle/10635/57525
الوسوم: إضافة وسم
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spelling sg-nus-scholar.10635-575252024-11-11T07:46:32Z Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors Tan, K.-M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Extended-II FinFET Multiple gate SiGe Source/drain stressors Strain Stress 10.1109/LED.2007.905406 IEEE Electron Device Letters 28 10 905-908 EDLED 2014-06-17T03:07:10Z 2014-06-17T03:07:10Z 2007-10 Article Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007-10). Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors. IEEE Electron Device Letters 28 (10) : 905-908. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.905406 07413106 http://scholarbank.nus.edu.sg/handle/10635/57525 000249942100019 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Extended-II
FinFET
Multiple gate
SiGe
Source/drain stressors
Strain
Stress
spellingShingle Extended-II
FinFET
Multiple gate
SiGe
Source/drain stressors
Strain
Stress
Tan, K.-M.
Liow, T.-Y.
Lee, R.T.P.
Hoe, K.M.
Tung, C.-H.
Balasubramanian, N.
Samudra, G.S.
Yeo, Y.-C.
Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
description 10.1109/LED.2007.905406
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Tan, K.-M.
Liow, T.-Y.
Lee, R.T.P.
Hoe, K.M.
Tung, C.-H.
Balasubramanian, N.
Samudra, G.S.
Yeo, Y.-C.
format Article
author Tan, K.-M.
Liow, T.-Y.
Lee, R.T.P.
Hoe, K.M.
Tung, C.-H.
Balasubramanian, N.
Samudra, G.S.
Yeo, Y.-C.
author_sort Tan, K.-M.
title Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
title_short Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
title_full Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
title_fullStr Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
title_full_unstemmed Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors
title_sort strained p-channel finfets with extended π-shaped silicon-germanium source and drain stressors
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/57525
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