Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

10.1063/1.2803853

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Bibliographic Details
Main Authors:	Wang, G.H., Toh, E.-H., Wang, X., Tripathy, S., Osipowicz, T., Chan, T.K., Hoe, K.-M., Balakumar, S., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57526
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Institution:	National University of Singapore

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