Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI)

• Main Authors: Xu, J., Yin, W.-Y., Mao, J.-F., Li, L.-W.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Breakdown; Electromagnetic pulses (EMPs); GaAs field-effect transistors (FETs); Intentional electromagnetic interference (IEMI); Maximum channel temperature; Nonlinear finite-element method (FEM); Silicon FET; Transient thermal response
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/57653
• Institution: National University of Singapore

10.1109/TEMC.2008.922792