Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI)

10.1109/TEMC.2008.922792

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Bibliographic Details
Main Authors:	Xu, J., Yin, W.-Y., Mao, J.-F., Li, L.-W.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Breakdown Electromagnetic pulses (EMPs) GaAs field-effect transistors (FETs) Intentional electromagnetic interference (IEMI) Maximum channel temperature Nonlinear finite-element method (FEM) Silicon FET Transient thermal response
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57653
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57653
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spelling	sg-nus-scholar.10635-576532023-10-31T20:17:19Z Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI) Xu, J. Yin, W.-Y. Mao, J.-F. Li, L.-W.J. ELECTRICAL & COMPUTER ENGINEERING Breakdown Electromagnetic pulses (EMPs) GaAs field-effect transistors (FETs) Intentional electromagnetic interference (IEMI) Maximum channel temperature Nonlinear finite-element method (FEM) Silicon FET Transient thermal response 10.1109/TEMC.2008.922792 IEEE Transactions on Electromagnetic Compatibility 50 2 340-346 IEMCA 2014-06-17T03:08:39Z 2014-06-17T03:08:39Z 2008-05 Article Xu, J., Yin, W.-Y., Mao, J.-F., Li, L.-W.J. (2008-05). Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI). IEEE Transactions on Electromagnetic Compatibility 50 (2) : 340-346. ScholarBank@NUS Repository. https://doi.org/10.1109/TEMC.2008.922792 00189375 http://scholarbank.nus.edu.sg/handle/10635/57653 000208095400015 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Breakdown Electromagnetic pulses (EMPs) GaAs field-effect transistors (FETs) Intentional electromagnetic interference (IEMI) Maximum channel temperature Nonlinear finite-element method (FEM) Silicon FET Transient thermal response
spellingShingle	Breakdown Electromagnetic pulses (EMPs) GaAs field-effect transistors (FETs) Intentional electromagnetic interference (IEMI) Maximum channel temperature Nonlinear finite-element method (FEM) Silicon FET Transient thermal response Xu, J. Yin, W.-Y. Mao, J.-F. Li, L.-W.J. Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI)
description	10.1109/TEMC.2008.922792
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Xu, J. Yin, W.-Y. Mao, J.-F. Li, L.-W.J.
format	Article
author	Xu, J. Yin, W.-Y. Mao, J.-F. Li, L.-W.J.
author_sort	Xu, J.
title	Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI)
title_short	Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI)
title_full	Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI)
title_fullStr	Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI)
title_full_unstemmed	Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI)
title_sort	thermal transient response of gaas fets under intentional electromagnetic interference (iemi)
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57653
_version_	1781781450138320896

Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI)

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