Understanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulations

• Main Authors: Dai, L., Tan, V.B.C., Yang, S.-W., Wu, P., Chen, X.-T.
• Other Authors: MECHANICAL ENGINEERING
• Format: Article
• Published: 2014
• Subjects: ab initio; Diffusion barrier; Interface; Low-k; Nitrogen; Pore-sealing
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/61644
• Institution: National University of Singapore

10.1016/j.susc.2007.06.025