Understanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulations

Understanding nitrogen-induced effects on the performance of ultra low-k dielectric systems through ab initio simulations

10.1016/j.susc.2007.06.025

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Bibliographic Details
Main Authors: Dai, L., Tan, V.B.C., Yang, S.-W., Wu, P., Chen, X.-T.
Other Authors: MECHANICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
ab initio
Diffusion barrier
Interface
Low-k
Nitrogen
Pore-sealing
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61644
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Institution: National University of Singapore

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