Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films

Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films

10.1149/1.1394122

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Bibliographic Details
Main Authors: Ang, C.H., Ling, C.H., Cheng, Z.Y., Kim, S.J., Cho, B.J.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61846
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Institution: National University of Singapore
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Summary:10.1149/1.1394122

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