Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

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Bibliographic Details
Main Authors: Ooi, J.A., Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72525
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Institution: National University of Singapore