Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Saved in:
Bibliographic Details
Main Authors: Ooi, J.A., Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72525
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Be the first to leave a comment!
You must be logged in first