Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's

10.1109/16.277367

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Bibliographic Details
Main Author: Pan, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62169
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Institution: National University of Singapore