Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's
10.1109/16.277367
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sg-nus-scholar.10635-621692024-11-10T13:00:41Z Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's Pan, Y. ELECTRICAL ENGINEERING 10.1109/16.277367 IEEE Transactions on Electron Devices 41 2 268-271 IETDA 2014-06-17T06:48:08Z 2014-06-17T06:48:08Z 1994-02 Article Pan, Y. (1994-02). Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's. IEEE Transactions on Electron Devices 41 (2) : 268-271. ScholarBank@NUS Repository. https://doi.org/10.1109/16.277367 00189383 http://scholarbank.nus.edu.sg/handle/10635/62169 A1994NA21300023 Scopus |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Pan, Y. |
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Pan, Y. |
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Pan, Y. Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's |
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Pan, Y. |
title |
Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's |
title_short |
Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's |
title_full |
Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's |
title_fullStr |
Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's |
title_full_unstemmed |
Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's |
title_sort |
experimental study of the fowler-nordheim tunneling induced degradation of ldd pmosfet's |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/62169 |
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