Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's

10.1109/16.277367

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Main Author: Pan, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62169
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-621692024-11-10T13:00:41Z Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's Pan, Y. ELECTRICAL ENGINEERING 10.1109/16.277367 IEEE Transactions on Electron Devices 41 2 268-271 IETDA 2014-06-17T06:48:08Z 2014-06-17T06:48:08Z 1994-02 Article Pan, Y. (1994-02). Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's. IEEE Transactions on Electron Devices 41 (2) : 268-271. ScholarBank@NUS Repository. https://doi.org/10.1109/16.277367 00189383 http://scholarbank.nus.edu.sg/handle/10635/62169 A1994NA21300023 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/16.277367
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Pan, Y.
format Article
author Pan, Y.
spellingShingle Pan, Y.
Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's
author_sort Pan, Y.
title Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's
title_short Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's
title_full Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's
title_fullStr Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's
title_full_unstemmed Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's
title_sort experimental study of the fowler-nordheim tunneling induced degradation of ldd pmosfet's
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/62169
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