Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's
10.1109/16.277367
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Main Author: | Pan, Y. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/62169 |
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Institution: | National University of Singapore |
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