Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's

Experimental study of the Fowler-Nordheim tunneling induced degradation of LDD PMOSFET's

10.1109/16.277367

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書目詳細資料
主要作者:	Pan, Y.
其他作者:	ELECTRICAL ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/62169
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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