Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm

Extraction of metal-oxide-semiconductor field-effect-transistor interface state and trapped charge spatial distributions using a physics-based algorithm

Journal of Applied Physics

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Bibliographic Details
Main Authors: Chim, W.K., Leang, S.E., Chan, D.S.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62174
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Institution: National University of Singapore
Description
Summary:Journal of Applied Physics

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