Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure

10.1109/55.823578

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Bibliographic Details
Main Authors:	Yue, J.M.P., Chim, W.K., Cho, B.J., Chan, D.S.H., Qin, W.H., Kim, Y.-B., Jang, S.-A., Yeo, I.-S.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62290
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-622902015-02-23T13:27:48Z Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure Yue, J.M.P. Chim, W.K. Cho, B.J. Chan, D.S.H. Qin, W.H. Kim, Y.-B. Jang, S.-A. Yeo, I.-S. ELECTRICAL ENGINEERING 10.1109/55.823578 IEEE Electron Device Letters 21 3 130-132 EDLED 2014-06-17T06:49:27Z 2014-06-17T06:49:27Z 2000-03 Article Yue, J.M.P.,Chim, W.K.,Cho, B.J.,Chan, D.S.H.,Qin, W.H.,Kim, Y.-B.,Jang, S.-A.,Yeo, I.-S. (2000-03). Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure. IEEE Electron Device Letters 21 (3) : 130-132. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/55.823578" target="_blank">https://doi.org/10.1109/55.823578</a> 07413106 http://scholarbank.nus.edu.sg/handle/10635/62290 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/55.823578
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Yue, J.M.P. Chim, W.K. Cho, B.J. Chan, D.S.H. Qin, W.H. Kim, Y.-B. Jang, S.-A. Yeo, I.-S.
format	Article
author	Yue, J.M.P. Chim, W.K. Cho, B.J. Chan, D.S.H. Qin, W.H. Kim, Y.-B. Jang, S.-A. Yeo, I.-S.
spellingShingle	Yue, J.M.P. Chim, W.K. Cho, B.J. Chan, D.S.H. Qin, W.H. Kim, Y.-B. Jang, S.-A. Yeo, I.-S. Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure
author_sort	Yue, J.M.P.
title	Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure
title_short	Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure
title_full	Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure
title_fullStr	Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure
title_full_unstemmed	Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure
title_sort	hot-carrier degradation mechanism in narrow- and wide-channel n-mosfet's with recessed locos isolation structure
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/62290
_version_	1681085748823982080

Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure

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