Low-frequency noise characterizattion of latent damage in thin oxides subjected to high-field impulse stressing

Low-frequency noise characterizattion of latent damage in thin oxides subjected to high-field impulse stressing

IEEE Electron Device Letters

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Bibliographic Details
Main Authors: Chim, W.K., Yeo, B.P., Lim, P.S., Chan, D.S.H.
Other Authors: ELECTRICAL ENGINEERING
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62394
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Institution: National University of Singapore
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Summary:IEEE Electron Device Letters

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