RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.

Physica Status Solidi (A) Applied Research

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Main Authors:	Ling, C.H., Kwok, C.Y., Prasad, K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62702
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-627022015-02-09T23:15:25Z RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING. Ling, C.H. Kwok, C.Y. Prasad K. ELECTRICAL ENGINEERING Physica Status Solidi (A) Applied Research 89 1 k39-k43 PSSAB 2014-06-17T06:53:57Z 2014-06-17T06:53:57Z 1985-05 Article Ling, C.H.,Kwok, C.Y.,Prasad,K. (1985-05). RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.. Physica Status Solidi (A) Applied Research 89 (1) : k39-k43. ScholarBank@NUS Repository. 00318965 http://scholarbank.nus.edu.sg/handle/10635/62702 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Physica Status Solidi (A) Applied Research
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ling, C.H. Kwok, C.Y. Prasad K.
format	Article
author	Ling, C.H. Kwok, C.Y. Prasad K.
spellingShingle	Ling, C.H. Kwok, C.Y. Prasad K. RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.
author_sort	Ling, C.H.
title	RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.
title_short	RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.
title_full	RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.
title_fullStr	RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.
title_full_unstemmed	RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.
title_sort	relative hydrogen content in plasma-enhanced cvd silicon nitride films: substrate temperature dependence and effect of thermal annealing.
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/62702
_version_	1681085824071892992

RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.

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