Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
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| 格式: | Article |
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2014
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| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/62732 |
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| 機構: | National University of Singapore |