Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide
10.1063/1.3485670
Saved in:
Main Authors: | Sun, J., Gong, H. |
---|---|
Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/64806 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Facile synthesis of amorphous ternary metal borides-reduced graphene oxide hybrid with superior oxygen evolution activity
by: Nsanzimana, Jean Marie Vianney, et al.
Published: (2021) -
CHARACTERIZING RESISTIVE SWITCHING PHENOMENA OF BINARY TRANSITION METAL OXIDES BY SCANNING PROBE MICROSCOPY TECHNIQUES
by: LU WANHENG
Published: (2017) -
Unexpected influence of substrate temperature on the properties of P-doped ZnO
by: Hu, G., et al.
Published: (2014) -
Significant improvement in electronic properties of transparent amorphous indium zinc oxide through yttrium doping
by: Sun, J., et al.
Published: (2014) -
Phase selection enabled formation of abrupt axial heterojunctions in branched oxide nanowires
by: Gao, J., et al.
Published: (2014)