Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction

10.1149/1.3375592

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Bibliographic Details
Main Author: Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/69243
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-692432023-10-27T09:03:59Z Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3375592 ECS Transactions 28 1 91-102 2014-06-19T02:58:27Z 2014-06-19T02:58:27Z 2010 Conference Paper Yeo, Y.-C. (2010). Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction. ECS Transactions 28 (1) : 91-102. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3375592 9781566777919 19385862 http://scholarbank.nus.edu.sg/handle/10635/69243 000313489900010 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1149/1.3375592
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Yeo, Y.-C.
format Conference or Workshop Item
author Yeo, Y.-C.
spellingShingle Yeo, Y.-C.
Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction
author_sort Yeo, Y.-C.
title Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction
title_short Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction
title_full Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction
title_fullStr Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction
title_full_unstemmed Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction
title_sort advanced source/drain engineering for mosfets: schottky barrier height tuning for contact resistance reduction
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/69243
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