Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction
10.1149/1.3375592
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2014
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sg-nus-scholar.10635-692432023-10-27T09:03:59Z Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3375592 ECS Transactions 28 1 91-102 2014-06-19T02:58:27Z 2014-06-19T02:58:27Z 2010 Conference Paper Yeo, Y.-C. (2010). Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction. ECS Transactions 28 (1) : 91-102. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3375592 9781566777919 19385862 http://scholarbank.nus.edu.sg/handle/10635/69243 000313489900010 Scopus |
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10.1149/1.3375592 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Yeo, Y.-C. |
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Conference or Workshop Item |
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Yeo, Y.-C. |
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Yeo, Y.-C. Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction |
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Yeo, Y.-C. |
title |
Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction |
title_short |
Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction |
title_full |
Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction |
title_fullStr |
Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction |
title_full_unstemmed |
Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction |
title_sort |
advanced source/drain engineering for mosfets: schottky barrier height tuning for contact resistance reduction |
publishDate |
2014 |
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http://scholarbank.nus.edu.sg/handle/10635/69243 |
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