Design of superjunction power MOSFET devices using the gradient oxide-bypassed structure
Proceedings of the International Conference on Power Electronics and Drive Systems
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| Main Authors: | , , |
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| 格式: | Conference or Workshop Item |
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2014
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| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/69873 |
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| 機構: | National University of Singapore |