Design of superjunction power MOSFET devices using the gradient oxide-bypassed structure

Proceedings of the International Conference on Power Electronics and Drive Systems

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Bibliographic Details
Main Authors: Chen, Y., Liang, Y.C., Samudra, G.S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/69873
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Institution: National University of Singapore

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