Development and characterization of high-k gate stack for Ge MOSFETs

10.1149/1.3122115

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Bibliographic Details
Main Authors: Xie, R., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/69900
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-699002015-03-05T02:24:25Z Development and characterization of high-k gate stack for Ge MOSFETs Xie, R. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3122115 ECS Transactions 19 2 537-561 2014-06-19T03:05:57Z 2014-06-19T03:05:57Z 2009 Conference Paper Xie, R.,Zhu, C. (2009). Development and characterization of high-k gate stack for Ge MOSFETs. ECS Transactions 19 (2) : 537-561. ScholarBank@NUS Repository. <a href="https://doi.org/10.1149/1.3122115" target="_blank">https://doi.org/10.1149/1.3122115</a> 9781566777100 19385862 http://scholarbank.nus.edu.sg/handle/10635/69900 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description 10.1149/1.3122115
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Xie, R.
Zhu, C.
format Conference or Workshop Item
author Xie, R.
Zhu, C.
spellingShingle Xie, R.
Zhu, C.
Development and characterization of high-k gate stack for Ge MOSFETs
author_sort Xie, R.
title Development and characterization of high-k gate stack for Ge MOSFETs
title_short Development and characterization of high-k gate stack for Ge MOSFETs
title_full Development and characterization of high-k gate stack for Ge MOSFETs
title_fullStr Development and characterization of high-k gate stack for Ge MOSFETs
title_full_unstemmed Development and characterization of high-k gate stack for Ge MOSFETs
title_sort development and characterization of high-k gate stack for ge mosfets
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/69900
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