Development and characterization of high-k gate stack for Ge MOSFETs
10.1149/1.3122115
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sg-nus-scholar.10635-699002015-03-05T02:24:25Z Development and characterization of high-k gate stack for Ge MOSFETs Xie, R. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3122115 ECS Transactions 19 2 537-561 2014-06-19T03:05:57Z 2014-06-19T03:05:57Z 2009 Conference Paper Xie, R.,Zhu, C. (2009). Development and characterization of high-k gate stack for Ge MOSFETs. ECS Transactions 19 (2) : 537-561. ScholarBank@NUS Repository. <a href="https://doi.org/10.1149/1.3122115" target="_blank">https://doi.org/10.1149/1.3122115</a> 9781566777100 19385862 http://scholarbank.nus.edu.sg/handle/10635/69900 NOT_IN_WOS Scopus |
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10.1149/1.3122115 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Xie, R. Zhu, C. |
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Conference or Workshop Item |
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Xie, R. Zhu, C. |
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Xie, R. Zhu, C. Development and characterization of high-k gate stack for Ge MOSFETs |
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Xie, R. |
title |
Development and characterization of high-k gate stack for Ge MOSFETs |
title_short |
Development and characterization of high-k gate stack for Ge MOSFETs |
title_full |
Development and characterization of high-k gate stack for Ge MOSFETs |
title_fullStr |
Development and characterization of high-k gate stack for Ge MOSFETs |
title_full_unstemmed |
Development and characterization of high-k gate stack for Ge MOSFETs |
title_sort |
development and characterization of high-k gate stack for ge mosfets |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/69900 |
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1681087098381139968 |