A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics

A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics

10.1109/EDSSC.2005.1635218

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Bibliographic Details
Main Authors: Tan, Y.P., James, M.-K.L., Zhang, Q., Wu, N., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/69075
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/69075

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