A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics

• Main Authors: Tan, Y.P., James, M.-K.L., Zhang, Q., Wu, N., Zhu, C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/69075
• Institution: National University of Singapore

10.1109/EDSSC.2005.1635218