A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics

10.1109/EDSSC.2005.1635218

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Main Authors:	Tan, Y.P., James, M.-K.L., Zhang, Q., Wu, N., Zhu, C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/69075
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-69075
record_format	dspace
spelling	sg-nus-scholar.10635-690752015-04-14T06:58:43Z A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics Tan, Y.P. James, M.-K.L. Zhang, Q. Wu, N. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/EDSSC.2005.1635218 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 111-113 2014-06-19T02:56:33Z 2014-06-19T02:56:33Z 2006 Conference Paper Tan, Y.P.,James, M.-K.L.,Zhang, Q.,Wu, N.,Zhu, C. (2006). A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC : 111-113. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/EDSSC.2005.1635218" target="_blank">https://doi.org/10.1109/EDSSC.2005.1635218</a> 0780393392 http://scholarbank.nus.edu.sg/handle/10635/69075 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/EDSSC.2005.1635218
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tan, Y.P. James, M.-K.L. Zhang, Q. Wu, N. Zhu, C.
format	Conference or Workshop Item
author	Tan, Y.P. James, M.-K.L. Zhang, Q. Wu, N. Zhu, C.
spellingShingle	Tan, Y.P. James, M.-K.L. Zhang, Q. Wu, N. Zhu, C. A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics
author_sort	Tan, Y.P.
title	A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics
title_short	A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics
title_full	A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics
title_fullStr	A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics
title_full_unstemmed	A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics
title_sort	simulation study of fibl in ge mosfets with high-k gate dielectrics
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/69075
_version_	1681086947319087104

A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics

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