A simulation study of FIBL in Ge MOSFETs with high-k gate dielectrics
10.1109/EDSSC.2005.1635218
Saved in:
Main Authors: | Tan, Y.P., James, M.-K.L., Zhang, Q., Wu, N., Zhu, C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/69075 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Development and characterization of high-k gate stack for Ge MOSFETs
by: Xie, R., et al.
Published: (2014) -
Gate stack engineering of germanium mosfets with high-K dielectrics
by: WU NAN
Published: (2010) -
Schottky source/drain MOSFETs on SiGe on insulator with high-K gate dielectric and TaN gate electrode
by: Gao, F., et al.
Published: (2014) -
New insights in hf based high-k gate dielectrics in mosfets
by: Li, M.-F., et al.
Published: (2014) -
Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
by: Zhu, S., et al.
Published: (2014)