Improved retention and cycling characteristics of MONOS memory using charge-trapping engineering

• Main Authors: Chin, A., Lin, S.H., Yang, H.J., Tsai, C.Y., Yeh, F.S., Liao, C.C., Li, M.-F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/70557
• Institution: National University of Singapore

10.1109/IPFA.2009.5232561