Investigation of nano-phase change for phase change random access memory

• Main Authors: Shi, L.P., Chong, T.C., Wei, X.Q., Zhao, R., Wang, W.J., Yang, H.X., Lee, H.K., Li, J.M., Yeo, N.Y., Lim, K.G., Miao, X.S., Song, W.D.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Conference or Workshop Item
• 出版: 2014
• 主題: Crystallization temperature; Nano-phase change; Non-volatile memory (NVM); Phase change RAM (PCRAM)
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/70682
• 機構: National University of Singapore

7th Annual Non-Volatile Memory Technology Symposium, NVMTS