M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization

ECS Transactions

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Main Authors:	Yeo, Y.-C., Chin, H.-C., Gong, X., Guo, H., Zhang, X.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/71083
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-71083
record_format	dspace
spelling	sg-nus-scholar.10635-710832015-01-26T13:53:18Z M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization Yeo, Y.-C. Chin, H.-C. Gong, X. Guo, H. Zhang, X. ELECTRICAL & COMPUTER ENGINEERING ECS Transactions 35 3 351-361 2014-06-19T03:19:39Z 2014-06-19T03:19:39Z 2011 Conference Paper Yeo, Y.-C.,Chin, H.-C.,Gong, X.,Guo, H.,Zhang, X. (2011). M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization. ECS Transactions 35 (3) : 351-361. ScholarBank@NUS Repository. 9781566778640 19385862 http://scholarbank.nus.edu.sg/handle/10635/71083 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	ECS Transactions
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yeo, Y.-C. Chin, H.-C. Gong, X. Guo, H. Zhang, X.
format	Conference or Workshop Item
author	Yeo, Y.-C. Chin, H.-C. Gong, X. Guo, H. Zhang, X.
spellingShingle	Yeo, Y.-C. Chin, H.-C. Gong, X. Guo, H. Zhang, X. M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization
author_sort	Yeo, Y.-C.
title	M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization
title_short	M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization
title_full	M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization
title_fullStr	M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization
title_full_unstemmed	M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization
title_sort	m-v mosfets: surface passivation, source/drain and channel strain engineering, self-aligned contact metallization
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/71083
_version_	1681087318849486848

M-V MOSFETs: Surface passivation, source/drain and channel strain engineering, self-aligned contact metallization

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