Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain

10.1109/ISDRS.2009.5378216

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Main Authors:	Koh, S.-M., Sinha, M., Tong, Y., Chin, H.-C., Fang, W.-W., Zhang, X., Ng, C.-M., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/71901
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-71901
record_format	dspace
spelling	sg-nus-scholar.10635-719012024-11-09T07:32:26Z Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain Koh, S.-M. Sinha, M. Tong, Y. Chin, H.-C. Fang, W.-W. Zhang, X. Ng, C.-M. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ISDRS.2009.5378216 2009 International Semiconductor Device Research Symposium, ISDRS '09 - 2014-06-19T03:29:07Z 2014-06-19T03:29:07Z 2009 Conference Paper Koh, S.-M.,Sinha, M.,Tong, Y.,Chin, H.-C.,Fang, W.-W.,Zhang, X.,Ng, C.-M.,Samudra, G.,Yeo, Y.-C. (2009). Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain. 2009 International Semiconductor Device Research Symposium, ISDRS '09 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2009.5378216" target="_blank">https://doi.org/10.1109/ISDRS.2009.5378216</a> 9781424460304 http://scholarbank.nus.edu.sg/handle/10635/71901 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/ISDRS.2009.5378216
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Koh, S.-M. Sinha, M. Tong, Y. Chin, H.-C. Fang, W.-W. Zhang, X. Ng, C.-M. Samudra, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Koh, S.-M. Sinha, M. Tong, Y. Chin, H.-C. Fang, W.-W. Zhang, X. Ng, C.-M. Samudra, G. Yeo, Y.-C.
spellingShingle	Koh, S.-M. Sinha, M. Tong, Y. Chin, H.-C. Fang, W.-W. Zhang, X. Ng, C.-M. Samudra, G. Yeo, Y.-C. Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain
author_sort	Koh, S.-M.
title	Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain
title_short	Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain
title_full	Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain
title_fullStr	Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain
title_full_unstemmed	Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain
title_sort	sulfur implant for reducing nickel silicide contact resistance in finfets with silicon-carbon source/drain
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/71901
_version_	1821203918165639168

Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain

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