Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain

• Main Authors: Koh, S.-M., Sinha, M., Tong, Y., Chin, H.-C., Fang, W.-W., Zhang, X., Ng, C.-M., Samudra, G., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/71901
• Institution: National University of Singapore

10.1109/ISDRS.2009.5378216