Thermal effect simulation of GaN HFETs under CW and pulsed operation

Thermal effect simulation of GaN HFETs under CW and pulsed operation

10.1093/ietele/e90-c.1.204

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Bibliographic Details
Main Authors: Xu, J., Yin, W.-Y., Mao, J., Li, L.-W.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
CW
GaN heterojunction field-effect transistors (HFETs)
Maximum temperature
PW
Thermal simulation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72012
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Institution: National University of Singapore
Description
Summary:10.1093/ietele/e90-c.1.204

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