Thermal effect simulation of GaN HFETs under CW and pulsed operation

• Main Authors: Xu, J., Yin, W.-Y., Mao, J., Li, L.-W.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: CW; GaN heterojunction field-effect transistors (HFETs); Maximum temperature; PW; Thermal simulation
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/72012
• Institution: National University of Singapore

10.1093/ietele/e90-c.1.204